Department: Physics and Astronomy
Organisation: University of Nottingham
Amorphous and crystalline GaNAs alloys for solar energy conversion devices
Ot
Other Investigator
Defect reduction in GaN using the in-situ growth of transition metal nitride layers
Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting
Materials World Network: Engineering Electronic Structure with Extremely Mismatched Semiconductor Alloys
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
Silicon Compatible GaN Power Electronics
Solar cells based on InGaN nanostructures
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