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Projects: Projects for Investigator
Reference Number EP/D068827/1
Title Technologies for SiC electronics and sensors in extreme environments
Status Completed
Energy Categories Energy Efficiency(Transport) 5%;
Not Energy Related 80%;
Other Power and Storage Technologies(Electric power conversion) 10%;
Energy Efficiency(Industry) 5%;
Research Types Basic and strategic applied research 100%
Science and Technology Fields ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering) 100%
UKERC Cross Cutting Characterisation Not Cross-cutting 100%
Principal Investigator Professor NG Wright
No email address given
Electrical, Electronic & Computer Eng
Newcastle University
Award Type Standard
Funding Source EPSRC
Start Date 01 December 2006
End Date 30 November 2011
Duration 60 months
Total Grant Value £510,385
Industrial Sectors Electronics
Region North East
Programme Energy Research Capacity, Information & Communication Technology, Materials, Mechanical and Medical Eng, Process Environment and Sustainability
 
Investigators Principal Investigator Professor NG Wright , Electrical, Electronic & Computer Eng, Newcastle University (99.998%)
  Other Investigator Professor A O'Neill , Electrical, Electronic & Computer Eng, Newcastle University (0.001%)
Dr AB Horsfall , Electrical, Electronic & Computer Eng, Newcastle University (0.001%)
  Recognised Researcher Dr K Vasilevskiy , Newcastle University (0.000%)
Web Site
Objectives
Abstract Silicon Carbide (SiC) electronics and sensor technologies will play an important role in the energy and transport technologies of the 21st Century. Environmental pressures to cut back on greenhouse gas emissions coupled with diminishing fossil fuel resources will drive a continuing increase in the use of electricity as the preferred point-of-use energy delivery mechanism. The efficient and flexible conversion of electrical energy is increasingly accomplished through the use of power electronics, a technology and business area that is set to expand rapidly over the next decades. SiC, in common with other wide band-gap semiconductors, offers the potential for dramatic improvements in the efficiency and range of applications for power electronics. It is thus seen as an enabler for many innovative energy and transport developments, such as power-dense electronics for the more electric aircraft, hybrid/all-electric road vehicles and rail traction or for application to the electricity generation and distribution network, where high-speed high-voltage switches are needed.The principal aim of this Platform Grant is to facilitate long-term, innovative, generic research into technologies that will deliver SiC electronics and sensor technology to extreme environment applications. This aim will be achieved through three specific objectives. First and foremost the Platform Grant will facilitate the retention of a core of expert research staff and provide for their career developmentwithin a secure and stable employment environment. Secondly, it will complement current and planned research activities by allowing the Team to address speculative but strategically important issues associated with SiC electronics and sensors. Thirdly, it will address the wider development needs of the Team by providing funds for a range of international exchanges.We foresee an increasing international effort towards realising the benefits of SiC devices in real-life applications and systemsand much of the proposed research is orientated in that direction. We plan major new investigations into applying advanced SiC devices coupled with new material fabrication methods to significant systems applications / in particular energy conversion (of crucial importance in all forms of renewable power) and new types of sensors for emerging areas such as real-time pollution monitoring in automobiles. Such developments will provide real benefit to society whilst opening up significant new commercialmarkets to those companies that can adopt these genuinely disruptive technologies. Alongside this system level perspective will be crucial developments in materials technologies (such as the application of new types of dielectric technology) and novel devices (SiC transistors fabricated using such dielectrics) that will underpin the dramatic improvements in system level performance that will arise from the application of such technologies
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Added to Database 20/03/07