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High efficiency solar panels based on multilayer graded-bandgap CIGS

Reference Number
S/P2/00480/00/00
Title
High efficiency solar panels based on multilayer graded-bandgap CIGS
Status
Completed
Energy Categories
Renewable Energy Sources(Solar Energy, Photovoltaics)
Research Types
Basic and strategic applied research
Applied Research and Development
Science and Technology Fields
PHYSICAL SCIENCES AND MATHEMATICS (Metallurgy and Materials)
ENGINEERING AND TECHNOLOGY
UKERC Cross Cutting Characterisation
Not Cross-cutting
Principal Investigator
Project Contact
Ionotec Ltd
Award Type
Standard
Funding Source
DTI
Start Date
03 October 2005
End Date
02 October 2008
Duration
36 months
Total Grant Value
£637,410
Industrial Sectors
Power
Region
North West
Programme
SOLAR-PV
Investigators
Principal Investigator
Project Contact, Ionotec Ltd
Other Investigator
Project Contact, Pilkington Group Ltd
Project Contact, Sheffield Hallam University
Web Site
Objectives
A new PV cell model has been formulated, patented and published by Sheffield Hallam University (SHU) which shows that device stability and efficiency are greatly influenced by Fermi level pinning at different defect levels present at the semiconductor-metal interface. This is a fundamental breakthrough in device understanding which creates the potential for producing a graded-bandgap multilayer thin film solarpanel of significantly improved performance. The project aim is to investigate and develop a novel semiconductor deposition process which has the potential for producing graded-bandgap CuInGaSe2 (CIGS) based solar panels, addressing the anticipated processing problems of uniformity and reproducibility with the aid of the improved device understanding. An industrial research electrodeposition facility will beset up for the production and evaluation of prototypes, supported by a basic and strategic research programme.
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Added to Database
01/01/07