A new PV cell model has been formulated, patented and published by Sheffield
Hallam University (SHU) which shows that device stability and efficiency are
greatly influenced by Fermi level pinning at different defect levels present
at the semiconductor-metal interface. This is a fundamental breakthrough in device
understanding which creates the potential for producing a graded-bandgap multilayer
thin film solarpanel of significantly improved performance. The project aim
is to investigate and develop a novel semiconductor deposition process which
has the potential for producing graded-bandgap CuInGaSe2 (CIGS) based solar panels,
addressing the anticipated processing problems of uniformity and reproducibility
with the aid of the improved device understanding. An industrial research electrodeposition
facility will beset up for the production and evaluation of prototypes, supported
by a basic and strategic research programme.
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01/01/07
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