Dilute Nitride Type II Quantum Dot Materials for Solar Cells based on GaAs - Collaborative Research in Energy with South Africa
Reference Number
EP/G070334/1
Title
Dilute Nitride Type II Quantum Dot Materials for Solar Cells based on GaAs - Collaborative Research in Energy with South Africa
Status
Completed
Energy Categories
Renewable Energy Sources(Solar Energy, Photovoltaics)
Research Types
Basic and strategic applied research
Science and Technology Fields
PHYSICAL SCIENCES AND MATHEMATICS (Physics)
UKERC Cross Cutting Characterisation
Not Cross-cutting
Principal Investigator
Professor A Krier
Physics
Lancaster University
Physics
Lancaster University
Award Type
Standard
Funding Source
EPSRC
Start Date
01 November 2009
End Date
31 October 2012
Duration
36 months
Total Grant Value
£401,156
Industrial Sectors
Energy
Region
North West
Programme
Energy : Energy
Other Investigator
Industrial Collaborator
Project Contact, Nelson Mandela Metropolitan University (NMMU), South Africa
Web Site
Objectives
Abstract
The development of efficient, affordable solar cells for clean energy production is a major global challenge and in this proposal we are seeking to achieve a breakthrough in the fabrication of novel quantum dot materials capable of substantially improving the performance of III-V solar cells based on GaAs. We propose a close collaborative project with Nelson Mandela Metropolitan University in South Africa, who have complementary expertise in photovoltaic cells, to develop and characterize hitherto unexplored GaSbN/GaNAs type-II quantum dot materials. These strain-compensated, dilute-nitride quantum dots will be implemented within the active region of prototype GaAs based solar cells to significantly extend the spectral response and improve the efficiency. This would lead to a new generation of solar cells for clean electricity generation. Feedback from device studies will provide valuable insight into the photovoltaic properties of these unique nanostructures, further aiding material optimization. The quantum dot materials that we shall develop here could either be used to increase efficiency in single junction cells, or could be incorporated into existing multi-junction cells to replace expensive Ge substrates, reduce cost and significantly increase performance. There are clear opportunities for uptake of the technology both within South Africa and the UK
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Added to Database
24/06/09
