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Projects: Projects for Investigator
Reference Number	EP/W007614/1
Title	ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching
Status	Started
Energy Categories	Energy Efficiency(Transport) 5%; Not Energy Related 95%;
Research Types	Basic and strategic applied research 100%
Science and Technology Fields	PHYSICAL SCIENCES AND MATHEMATICS (Chemistry) 25%; PHYSICAL SCIENCES AND MATHEMATICS (Physics) 25%; PHYSICAL SCIENCES AND MATHEMATICS (Metallurgy and Materials) 25%; ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering) 25%;
UKERC Cross Cutting Characterisation	Not Cross-cutting 100%
Principal Investigator	Professor F Udrea No email address given Engineering University of Cambridge
Award Type	Standard
Funding Source	EPSRC
Start Date	01 May 2021
End Date	30 April 2024
Duration	36 months
Total Grant Value	£270,330
Industrial Sectors	Electronics; Energy; Transport Systems and Vehicles
Region	East of England
Programme	NC : Engineering
Investigators	Principal Investigator	Professor F Udrea , Engineering, University of Cambridge (100.000%)
	Industrial Collaborator	Project Contact , University of Southern California, USA (0.000%) Project Contact , Virginia Polytechnic Institute and State University (Virginia Tech), USA (0.000%)
Web Site
Objectives
Abstract	Gallium nitride (GaN) high electron mobility transistors (HEMTs) are widely perceived as the next-generation power devices for electrical energy processing in electric vehicles, electricity grid, and data centers, among other applications. Although low-voltage GaN HEMTs have been commercialized recently by companies such as GaN Systems, Navitas, Infineon and EPC, their penetration into the $35 billion power device market is still slow, mainly due to their limited reliability and robustness. In particular the lack of capability to dissipate surge energy when in breakdown is one of the main shortcomings of Gallium nitride power devices. The limited robustness, in turn, requires significant over-engineering makingthe performance of current GaN devices less attractive.In this project we aim to develop a superjunction GaN heterojunction transistor based on selective-area growth of an Aluminum Gallium-Nitride layer, nearly defect-free embedding, adjacent to the existing two dimensional electron gas to allow for charge compensation. The electron concentration of the two dimensional gas can be increased by a factor of 3-5X, when compared to a standard device, resulting in a significant reduction of chip size, wafer cost per device, device capacitance, and switching losses. Meanwhile, the peak electric field is moved from device surface into the bulk of the transistor allowing for an increased robustness during breakdown. The proposed superjunction Gallium Nitride device could enable an unprecedented enhancement in switching frequency, power conversion efficiency, and surge robustness in power systems. We assembled a strong consortium with complementary expertise comprising both US and UK researchers with a strong track record of collaboration. Florin Udrea at Cambridge University, UK, is a pioneer in power devices and was involved in early work on superjunction devices. Yuhao Zhang at Virginia Tech, US has significant expertise in nitride processing and growth technologies in III-V materials. Han Wang at University of Southern California, US has dedicated expertise in material and device characterization This project will significantly expand the application space of nitride power transistors and revolutionize the landscape of medium and high-voltage power electronics. The developed technologies for selective area p-type doping can bring significant advancements in many other nitride devices. The knowledge on bulk-2D SJ will open the door for developing novel electronic and optoelectronics devices in other bulk and 2DEG materials
Publications	(none)
Final Report	(none)
Added to Database	24/11/21