To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

Completed

Energy Efficiency(Residential and commercial)

Applied Research and Development

PHYSICAL SCIENCES AND MATHEMATICS (Physics)
ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering)

Not Cross-cutting

Project Contact
Anvil Semiconductors Limited

Feasibility Study

Innovate UK

01 October 2015

30 September 2016

12 months

£229,121

West Midlands

Competition Call: 1411_FS_ENE_GEN_ENCATES2 - Energy Catalyst Rnd 2 - (FS). Activity Energy Catalyst Rnd 2 - (FS)

Project Contact, Anvil Semiconductors Limited

Project Contact, Plessey Semiconductors Limited
Project Contact, University of Cambridge

The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.

13/02/18