ALEGRO: Atomic Layer Deposition and Etching for GaN Power Device Applications

Completed

Energy Efficiency(Transport)
Other Power and Storage Technologies(Electricity transmission and distribution)

Applied Research and Development

PHYSICAL SCIENCES AND MATHEMATICS (Chemistry)
PHYSICAL SCIENCES AND MATHEMATICS (Physics)
ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering)

Not Cross-cutting

Project Contact
Oxford Instruments Nanotechnology Tools Ltd

Collaborative R&D

Innovate UK

01 September 2017

30 November 2018

15 months

£266,115

South East

Competition Call: 1607_MM_SEMICON_LO - Accelerating the commercial application of compound semiconductors over 100k. Activity Compound - Semiconductor Applications - ISCF

Project Contact, Oxford Instruments Nanotechnology Tools Ltd

Project Contact, University of Glasgow

Electric cars and electric power delivery need efficient electrical switching devices. Semiconductor devices can do this, but also waste some energy when switching. This project plans to demonstrate high voltage switching devices using gallium nitride (GaN), the most significant semiconductor material after silicon, in a novel device format which can operate more efficiently and switch faster than the current device hybrids based on compound semiconductors combined with silicon. Making such devices will require almost atomic precision in etching and depositing layers. The project will further develop atomic layer etching (ALE) and atomic layer deposition (ALD) tools and processes ready for the manufacture of such devices. Oxford Instruments brings its experience as a process tool manufacturer for plasma-enhanced ALD, and its recent innovation in ALE, and will develop these tools and processes. The University of Glasgow will use its expertise in device design and manufacture to demonstrate a process flow for device manufacture.

19/05/20