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Projects: Projects for Investigator
Reference Number EP/G065462/1
Title InGaN-Alloy Materials for Improved Optoelectronic and Photovoltaic Applications
Status Completed
Energy Categories Renewable Energy Sources(Solar Energy, Photovoltaics) 50%;
Energy Efficiency(Residential and commercial) 50%;
Research Types Basic and strategic applied research 100%
Science and Technology Fields PHYSICAL SCIENCES AND MATHEMATICS (Chemistry) 50%;
UKERC Cross Cutting Characterisation Not Cross-cutting 100%
Principal Investigator Professor TS (Tim ) Jones
No email address given
University of Warwick
Award Type Standard
Funding Source EPSRC
Start Date 01 July 2009
End Date 31 December 2012
Duration 42 months
Total Grant Value £1
Industrial Sectors No relevance to Underpinning Sectors
Region West Midlands
Programme Physical Sciences
Investigators Principal Investigator Professor TS (Tim ) Jones , Chemistry, University of Warwick (99.998%)
  Other Investigator Professor CF McConville , Physics, University of Warwick (0.001%)
Professor PA Thomas , Physics, University of Warwick (0.001%)
Web Site
Abstract III-Nitride quantum well (QW) heterostructures are used in a number of electronic devices including blue light emitting diodes (LEDs) and lasers. There is a significant worldwide effort to develop UV LEDs and lasers as well as UV-optical modulators, detectors, and emitters based on quantum cascade designs. These later devices are based primarily on AlGaInN multiple QWs. The development of such devices is important for many applications including solid state lighting, chemical and biological sensing and free-space optical communications. However, the growth as well as the crystal and electronic structure of InGaN alloys with high InN mole fraction are poorly understood and this limits the potential of these materials.The goal of the proposed collaborative research between groups at Boston University (BU) and the University of Warwick (UW), is to address and resolve problems related to the growth of InGaN alloys with high InN mole fraction and to study the crystal and electronic structure of such alloys and quantum structures. We believe that such an international synergistic effort between groups with complementary strengths and expertise will lead to the development of methods of controlling the growth at the atomic level and of designing InGaN quantum structures with controlled interface roughness and strain. The collaborative groups feature those of Moustakas and Ludwig at BU with Jones at UW focused on materials growth, Ludwig and Basu at BU with Thomas at UW focused on crystal structure, and Smith and Averitt at BU with McConville at UW focused on electronic and optoelectronic structure. The goal is to produce InGaN alloys and heterostructures with predictable and reproducible optoelectronic properties, in order to improve the efficiency of existing devices (green LEDs) and facilitate the development of a new generation of devices (green lasers and high efficiency solar cells). The proposed activities include research on state-of-the-art nitride alloy growth, study of alloy atomic structure and microstructure, study of the bulk and surface electronic structure of these alloys, and study of their optical characteristics. The optical transport and recombination properties will be investigated and correlations with the crystal structure and defects as well as the electronic structure will be established. Complexities of III-nitride QWs, such as large lattice mismatch, heavy effective masses, and strong internal electric fields due to polarization will also be investigated
Publications (none)
Final Report (none)
Added to Database 07/11/11