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Reference Number EP/R00448X/1
Title Underpinning Power Electronics switch optimisation Theme
Status Completed
Energy Categories OTHER POWER and STORAGE TECHNOLOGIES(Electricity transmission and distribution) 100%;
Research Types Basic and strategic applied research 100%
Science and Technology Fields ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering) 100%
UKERC Cross Cutting Characterisation Not Cross-cutting 100%
Principal Investigator Dr PM Gammon
No email address given
School of Engineering
University of Warwick
Award Type Standard
Funding Source EPSRC
Start Date 01 January 2018
End Date 31 December 2020
Duration 36 months
Total Grant Value £1,194,288
Industrial Sectors Energy
Region West Midlands
Programme Energy : Energy, Manufacturing : Manufacturing, NC : Engineering, NC : ICT
 
Investigators Principal Investigator Dr PM Gammon , School of Engineering, University of Warwick (99.994%)
  Other Investigator Professor NG Wright , Electrical, Electronic & Computer Eng, Newcastle University (0.001%)
Professor A O'Neill , Electrical, Electronic & Computer Eng, Newcastle University (0.001%)
Professor P Mawby , School of Engineering, University of Warwick (0.001%)
Dr RA McMahon , Engineering, University of Cambridge (0.001%)
Professor F Udrea , Engineering, University of Cambridge (0.001%)
Dr N N Lophitis , Ins for Future Transport & Cities, Coventry University (0.001%)
  Industrial Collaborator Project Contact , Siemens plc (0.000%)
Project Contact , Dynex Semiconductor Ltd (0.000%)
Web Site
Objectives
Abstract Silicon carbide (SiC) N-channel IGBTs have the potential to enable new and highly efficient ultrahigh voltage (10 kV+) applications such as the Smart Grid and HVDC, enabling a low carbon society. However, to date, only four research groups have reported on their successful development, due to the considerable challenge associated with their fabrication. Exploiting a consortium made up of experts from the fields of SiC materials, simulation and fabrication, and building on a recent history of SiC MOSFET, Si IGBT and SiC materials research, the aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe and the world to develop these devices, and to push the boundaries of what has been achieved in this fledgling field to date. Once a quality benchmarked ~15 kV SiC IGBT process is developed as the first milestone in this project, the process will be modified to explore areas not to-date explored, including the development of lower voltage (5-10 kV) SiC IGBTs benchmarked to SiC MOSFETs, trench SiC IGBTs, and novel topologies such as hybrid SiC MOSFET-IGBTs. The consortium will all work together towards these ambitious goals, with the work packages split by expertise (materials development, simulation, fabrication and testing) to cut across each of the objectives
Publications (none)
Final Report (none)
Added to Database 01/03/19