Projects
Projects: Projects for Investigator |
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| Reference Number | InnUK/132135/01 | |
| Title | To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates | |
| Status | Completed | |
| Energy Categories | Energy Efficiency(Residential and commercial) 100%; | |
| Research Types | Applied Research and Development 100% | |
| Science and Technology Fields | PHYSICAL SCIENCES AND MATHEMATICS (Physics) 50%; ENGINEERING AND TECHNOLOGY (Electrical and Electronic Engineering) 50%; |
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| UKERC Cross Cutting Characterisation | Not Cross-cutting 100% | |
| Principal Investigator |
Project Contact No email address given Anvil Semiconductors Limited |
|
| Award Type | Feasibility Study | |
| Funding Source | Innovate-UK | |
| Start Date | 01 October 2015 | |
| End Date | 30 September 2016 | |
| Duration | 12 months | |
| Total Grant Value | £229,121 | |
| Industrial Sectors | ||
| Region | West Midlands | |
| Programme | Competition Call: 1411_FS_ENE_GEN_ENCATES2 - Energy Catalyst Rnd 2 - (FS). Activity Energy Catalyst Rnd 2 - (FS) | |
| Investigators | Principal Investigator | Project Contact , Anvil Semiconductors Limited (44.316%) |
| Other Investigator | Project Contact , University of Cambridge (43.145%) Project Contact , Plessey Semiconductors Limited (12.539%) |
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| Web Site | ||
| Objectives | ||
| Abstract | The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil s silicon carbide on silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting. Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil s IP manages the inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting. | |
| Data | No related datasets |
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| Projects | No related projects |
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| Publications | No related publications |
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| Added to Database | 13/02/18 | |
